Structurable Layer Etching

structurable layer etching - crmbakery.nl

3. Structure transfer into absorber layer via ion beam etching. 4. Anisotropic wet etching process for silicon (100) substrate removal. •Nickel is structurable by ion beam etching. •Nickel redeposition occurs during etching process and limits minimal structure size and period. -> Optimization of IBE process: •Etching angle •Sample rotation

JPH05275401A - Etching method for sacrifice layer - …

PURPOSE: To remove the possibility of a structure adhering to a substrate by gas phase-etching a sacrifice layer in a gas containing hydrogen fluoride gas and a very small amount of water vapor. CONSTITUTION: A polysilicon structural layer 13 is provided on a sacrifice layer 12 and etched into a required form. The sacrifice layer 12 is removed by gas phase-etching and a beam is released ...

WO2006013137A2 - Method for etching a layer on a …

The invention relates to a method for etching a layer to be removed on a substrate (Sub), during which an Si1-xGex layer (4; 6, 10) is provided as the layer to be removed and, during gas phase etching, is removed at least in areas with the aid of an etching gas, particularly ClF3. The etching behavior Si1-xGex layer (4; 6, 10) can be controlled by the proportion of Ge contained in the Si1-xGex ...

Selective chemical wet etching of Si1-xGex versus Si in ...

Furthermore, we investigated the effect of structural factors on the lateral etching of Si 1-x Ge x to apply a selective etching process in Si/Si 1-x Ge x /Si multi-layer to obtain Si nanostructures. We found that the lateral etch rate of Si 1-x Ge x in Si/Si 1-x Ge x /Si multi-layers can be reduced owing to the oxide of adjacent Si layers in the etched tunnel, which is not completely removed ...

US5674354A - Method for etching a conducting layer of …

A method for etching a conducting layer in a semiconductor device fabrication procedure is disclosed. The method provides for the formation of the conductor path with defined and precise control over the path width. The fabricated semiconductor device has a step-raised layer-covering structural configuration on a substrate, and the step-raised layer-covering structural configuration forms re ...

LPCVD silicon dioxide sacrificial layer etching for ...

The key step in producing a movable microstructure is the controllable sacrificial layer etching process. For the current study, a 1 micron silicon-rich nitride structural layer was deposited on a 2 micron phosphosilicate glass (PSG) sacrificial layer that had been deposited on a single-crystal silicon wafer. Silicon nitride, unlike the more common polycrystalline silicon (poly-Si) structural ...

US5314578A - Process for etching a multi-layer substrate ...

A carbon-containing, chemical etchant protective patterned layer is formed on a multi-layer substrate including a silicon dioxide layer formed on an underlying silicon or metal silicide layer by providing a predetermined pattern defining a plurality of openings in the carbon-containing, chemical etchant protective patterned layer. Next, the plurality of exposed areas of the major surface of ...

Structural and morphological characterization of the ...

Structural and morphological characterization of the layered carbide-derived-carbon ... Accordingly, the etching of both aluminum and titanium elements of the prepared Ti 2 AlC in our study can be related to the morphology and ... In related literature [, , ], for the single-layer and bi-layer …

Silicon dioxide sacrificial layer etching in surface ...

Silicon dioxide sacrificial layer etching in surface micromachining JBuhler¨ y, F-P Steiner and H Baltes Physical Electronics Laboratory, ETH Zurich, HPT H6, CH-8093 Z¨ urich, Switzerland¨ Received 12 June 1996, accepted for publication 22 January 1997 Abstract. Silicon dioxide sacrificial layer etching has become a major surface

Atomic-layer soft plasma etching of MoS 2 | Scientific …

27-1-2016· Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and …

DE3915650A1 - Layer structuring - involving mask layer ...

Structuring of a layer on a semiconductor layer structure is carried out by: (a) applying, onto the layer (2) to be structured, an auxiliary layer having good etch selectivity w.r.t. the layer (2); (b) applying and photolithographically structuring a photolacquer layer on the auxiliary layer; (c) transferring the photolacquer structure (41) to the auxiliary layer by etching; (d) selectively ...

Selective chemical wet etching of Si1-xGex versus Si in ...

Furthermore, we investigated the effect of structural factors on the lateral etching of Si 1-x Ge x to apply a selective etching process in Si/Si 1-x Ge x /Si multi-layer to obtain Si nanostructures. We found that the lateral etch rate of Si 1-x Ge x in Si/Si 1-x Ge x /Si multi-layers can be reduced owing to the oxide of adjacent Si layers in the etched tunnel, which is not completely removed ...

Structural properties of porous silicon layers - Influence ...

Request PDF | Structural properties of porous silicon layers - Influence of etching time | X-ray diffraction, SEM and FTIR studies were carried out for p-type porous silicon samples, prepared for ...

Silicon dioxide sacrificial layer etching in surface ...

Silicon dioxide sacrificial layer etching in surface micromachining JBuhler¨ y, F-P Steiner and H Baltes Physical Electronics Laboratory, ETH Zurich, HPT H6, CH-8093 Z¨ urich, Switzerland¨ Received 12 June 1996, accepted for publication 22 January 1997 Abstract. Silicon dioxide sacrificial layer etching has become a major surface

p. kumar Sacrificial etching of Al Ga1 x As 2 for III–V ...

Sacrificial etching of Al xGa1 ... than black wax to peel back the structural layer in a system-atic study considering HF concentrations from 1%–10% and Al mole fractions between 0.65–1.0 [13]. Etch rates above 500µm/min were achieved for AlAs when applying suffi-

INF5490 RF MEMS - Forsiden - Universitetet i Oslo

• Structural layer • Sacrificial layer = ”distance-keeping” layer – Selective etching of structural layers – Removing sacrificial layers. 10 Srinivasan. Srinivasan 11. 12 Surface micromachining •+Can make structures with smaller dimensions

Layer Thinning and Etching of Mechanically Exfoliated …

A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS 2 nanosheets in air is reported. Using this method, single‐layer (1L) MoS 2 nanosheets are achieved after the thinning of MoS 2 nanosheets from double‐layer (2L) to quadri‐layer (4L) at 330 °C. The as‐prepared 1L MoS 2 nanosheet shows comparable optical and electrical properties with the ...

Metallographic Etching Procedures & Methods | Buehler

Metallographic etching encompasses all processes used to reveal particular structural characteristics of a metal that are not evident in the as-polished condition. Examination of a properly polished specimen before etching may reveal structural aspects such as porosity, cracks, and nonmetallic inclusions.

Laboratory simulation of martensite formation of white ...

1-10-2016· 1. Introduction. Rolling contact fatigue (RCF) is the dominant damage mechanism in rails and has attracted wide scientific interest. The high and repetitive external load, exceeding 1 GPa, leads to formation of peculiar surface structural alterations, surface crack formation and spallation , .One such specific structural phenomenon in rail surface is widely named white etching layer (WEL

Surface micromachining - Wikipedia

Dry etching can combine chemical etching with physical etching or ion bombardment. Surface micro-machining involves as many layers as are needed with a different mask (producing a different pattern) on each layer. Modern integrated circuit fabrication uses this technique and can use as many as 100 layers.

Molecular dynamics simulation of atomic layer etching of ...

A molecular dynamics study of 50 eV Ar + ion bombardment of a Si(100) crystal with a monolayer of adsorbed chlorine was conducted to simulate atomic layer etching (ALET) of Si. The total reaction yield (Si atoms removed per ion) was 0.172; 84% of silicon was removed as SiCl, 8% as elemental Si and 8% as SiCl 2.Based on the total yield, an ion dose of 1.16×10 16 ions/cm 2 is necessary to ...

US Patent for Process for selectively etching a layer of ...

More specifically, a process is provided for etching a multilayer structure to form a predetermined etched pattern therein. The subject process comprises providing the multilayer structure having a plurality of structural layers. The structural layers of the multilayer structure comprise a silicon dioxide outer layer on an underlying silicon nitride stop layer.

METHOD AND APPARATUS FOR ETCHING THE SILICON …

An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the ...

Realization of atomic layer etching of silicon

A. Atomic layer etching requirements Atomic layer etching ~ALET! of silicon is a cyclic pro-cess consisting of four consecutive steps: ~1! Exposure of a clean single crystal silicon surface to chlorine gas, and adsorption ~chemisorption! of the gas onto the surface to form a monolayer; ~2! Evacuation of the chamber, so that only the chemi ...

Smooth, Anisotropic Etching of Indium Containing Multi ...

smooth and notch free etching process. The effects of substrate temperature, RIE power and ICP power on the etching performance are discussed. Indium containing multi-layer structures were etched at rates of 2.0 µm/min with extremely smooth and clean surface (surface roughness < 2.0 nm RMS). The etch selectivity to hard

Polymer as the protecting passivaton layer in fabricating ...

polymer passivation layer under various structural openings. The roughness of the microstructure sidewall also influences the deposition results of the polymer passivation layer. In reactive ion etching, the cyclic process of alternating Bosch 2. J. Micromech. Microeng. 22 (2012) 045015 Y-H Lin and W Hsu

Etching | printing | Britannica

In the variety of etching known as aquatint, a copperplate is exposed to acid through a layer of melted granulated resin, leaving an evenly pitted surface that yields broad areas of tone when the grains are removed and the plate is printed.Etching and aquatint are often combined in a print by means of successive workings of its plate. The practice of making prints from etched metal plates grew ...

Silicon Sacrificial Layer Dry Etching (SSLDE) for free ...

Silicon Sacrificial Layer Dry Etching (SSLDE) for free-standing RF MEMS architectures S. Frédérico 1, C. Hibert , R. Fritschi1,2, Ph.Flückiger1, Ph.Renaud1,2, A. M. Ionescu2 1 EPFL Center of Micro-Nano-Technology (CMI), 2 Institute of Microelectronics and Microsystems (IMM) Swiss Federal Institute of Technology Lausanne (EPFL),

Etching (microfabrication) - Wikipedia

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching.

Etching characteristics of Si{110} in 20 wt% KOH with ...

26-5-2017· Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and …

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